FQB9P25TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

20 ns

Avalanche Energy Rating (Eas) :

650 mJ

Power Dissipation-Max :

3.13W Ta 120W Tc

Terminal Finish :

Tin (Sn)

Series :

QFET®

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

3

Current Rating :

-9.4A

Vgs(th) (Max) @ Id :

5V @ 250μA

Voltage - Rated DC :

-250V

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

P-Channel

Published :

2016

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

9.4A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Radiation Hardening :

No

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 25V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-250V

Continuous Drain Current (ID) :

9.4A

RoHS Status :

RoHS Compliant

Weight :

1.31247g

Turn-Off Delay Time :

45 ns

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Fall Time (Typ) :

65 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

JESD-609 Code :

e3

Number of Terminations :

2

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Power Dissipation :

3.13W

Drain-source On Resistance-Max :

0.62Ohm

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

620m Ω @ 4.7A, 10V

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Pbfree Code :

yes

Rise Time :

150ns

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

250V