FQB9N25TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

420m Ω @ 4.7A, 10V

Case Connection :

DRAIN

Power Dissipation-Max :

3.13W Ta 90W Tc

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

37.6A

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

250V

Current - Continuous Drain (Id) @ 25°C :

9.4A Tc

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Terminal Position :

Single

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

165 mJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Form :

Gull wing

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.42Ohm

DS Breakdown Voltage-Min :

250V

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

9.4A

Mounting Type :

Surface Mount

Series :

QFET®

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Unknown

RoHS Status :

ROHS3 Compliant