FQB9N25TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

250V

Qualification Status :

COMMERCIAL

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Terminal Finish :

MATTE TIN

Mounting Type :

Surface Mount

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Vgs (Max) :

±30V

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

9.4A Tc

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

37.6A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Reach Compliance Code :

Unknown

JESD-609 Code :

e3

Series :

QFET®

Terminal Position :

Single

Power Dissipation-Max :

3.13W Ta 90W Tc

Rds On (Max) @ Id, Vgs :

420m Ω @ 4.7A, 10V

Drain-source On Resistance-Max :

0.42Ohm

Number of Elements :

1

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

250V

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

165 mJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Case Connection :

DRAIN

Surface Mount :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

9.4A