FQB9N25CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Terminal Form :

Gull wing

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

COMMERCIAL

Series :

QFET®

DS Breakdown Voltage-Min :

250V

Pin Count :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

8.8A

Pulsed Drain Current-Max (IDM) :

35.2A

Current - Continuous Drain (Id) @ 25°C :

8.8A Tc

Additional Feature :

FAST SWITCHING

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.43Ohm

Mounting Type :

Surface Mount

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

250V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 25V

Power Dissipation-Max :

3.13W Ta 74W Tc

Reach Compliance Code :

Unknown

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Pbfree Code :

yes

Case Connection :

DRAIN

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

285 mJ

Rds On (Max) @ Id, Vgs :

430m Ω @ 4.4A, 10V