FQB9N50CFTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Power Dissipation-Max :

173W Tc

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Avalanche Energy Rating (Eas) :

300 mJ

Drain to Source Voltage (Vdss) :

500V

Additional Feature :

FAST SWITCHING

Terminal Finish :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Series :

FRFET®

Drain Current-Max (Abs) (ID) :

9A

DS Breakdown Voltage-Min :

500V

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

36A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±30V

Reach Compliance Code :

Unknown

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

9A Tc

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

1.03pF @ 25V

Pin Count :

3

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

850m Ω @ 4.5A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Gull wing

Qualification Status :

COMMERCIAL

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.85Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)