FQB9N50TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

MATTE TIN

Mounting Type :

Surface Mount

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

360 mJ

FET Type :

N-Channel

Reach Compliance Code :

Unknown

Qualification Status :

COMMERCIAL

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

3.13W Ta 147W Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

36A

Series :

QFET®

Drain Current-Max (Abs) (ID) :

9A

Rds On (Max) @ Id, Vgs :

730m Ω @ 4.5A, 10V

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1.45pF @ 25V

Pbfree Code :

yes

Number of Elements :

1

Pin Count :

3

DS Breakdown Voltage-Min :

500V

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

500V

Drain-source On Resistance-Max :

0.73Ohm

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Transistor Element Material :

SILICON