FQB9N50CFTM_WS
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- Mfr.Part #
- FQB9N50CFTM_WS
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 9A D2PAK
- Stock
- 36,885
- In Stock ：
- 36,885
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 173W Tc
- Vgs (Max) :
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1030pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Published :
- 2006
- Series :
- FRFET®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Supplier Device Package :
- D2PAK (TO-263AB)
- Rds On (Max) @ Id, Vgs :
- 850mOhm @ 4.5A, 10V
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 500V
- Datasheets
- FQB9N50CFTM_WS
N-Channel Tape & Reel (TR) 850mOhm @ 4.5A, 10V ±30V 1030pF @ 25V 35nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB9N50CFTM_WS Overview
A device's maximal input capacitance is 1030pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FQB9N50CFTM_WS Features
a 500V drain to source voltage (Vdss)
FQB9N50CFTM_WS Applications
There are a lot of ON Semiconductor
FQB9N50CFTM_WS applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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