FQB9N50TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

36A

Avalanche Energy Rating (Eas) :

360 mJ

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1.45pF @ 25V

Terminal Finish :

MATTE TIN

Case Connection :

DRAIN

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Terminal Form :

Gull wing

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

COMMERCIAL

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

730m Ω @ 4.5A, 10V

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

9A

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Unknown

DS Breakdown Voltage-Min :

500V

Drain-source On Resistance-Max :

0.73Ohm

Drain to Source Voltage (Vdss) :

500V

Transistor Application :

SWITCHING

Number of Terminations :

2

Number of Elements :

1

Series :

QFET®

Pin Count :

3

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Power Dissipation-Max :

3.13W Ta 147W Tc

Operating Mode :

ENHANCEMENT MODE