FQB9N50TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

36A

Power Dissipation-Max :

3.13W Ta 147W Tc

Drain to Source Voltage (Vdss) :

500V

Input Capacitance (Ciss) (Max) @ Vds :

1.45pF @ 25V

Avalanche Energy Rating (Eas) :

360 mJ

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.73Ohm

Reach Compliance Code :

Unknown

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Pbfree Code :

yes

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Terminal Finish :

MATTE TIN

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

9A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

QFET®

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

500V

Vgs (Max) :

±30V

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

FET Type :

N-Channel

Pin Count :

3

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

730m Ω @ 4.5A, 10V