FQB9N50CTM
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- Mfr.Part #
- FQB9N50CTM
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 9A D2PAK
- Stock
- 20,000
- In Stock ：
- 20,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Rise Time :
- 65ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1030pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Threshold Voltage :
- 2V
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Height :
- 4.83mm
- Power Dissipation :
- 135W
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Current Rating :
- 9A
- JESD-30 Code :
- R-PSSO-G2
- Fall Time (Typ) :
- 64 ns
- Number of Terminations :
- 2
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 135W Tc
- Width :
- 9.65mm
- Element Configuration :
- Single
- Resistance :
- 800mOhm
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 18 ns
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 500V
- Length :
- 10.67mm
- Published :
- 2003
- Factory Lead Time :
- 7 Weeks
- Turn-Off Delay Time :
- 93 ns
- Terminal Finish :
- Tin (Sn)
- Drain to Source Breakdown Voltage :
- 500V
- Series :
- QFET®
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Form :
- Gull wing
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Drain Current-Max (Abs) (ID) :
- 9A
- Continuous Drain Current (ID) :
- 9A
- Rds On (Max) @ Id, Vgs :
- 800m Ω @ 4.5A, 10V
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Weight :
- 1.31247g
- Datasheets
- FQB9N50CTM
N-Channel Tape & Reel (TR) 800m Ω @ 4.5A, 10V ±30V 1030pF @ 25V 35nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB9N50CTM Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1030pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 9A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 9A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 93 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FQB9N50CTM Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 93 ns
a threshold voltage of 2V
FQB9N50CTM Applications
There are a lot of ON Semiconductor
FQB9N50CTM applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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