FQB3P20TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

P-Channel

DS Breakdown Voltage-Min :

200V

Current - Continuous Drain (Id) @ 25°C :

2.8A Tc

Drain to Source Voltage (Vdss) :

200V

Avalanche Energy Rating (Eas) :

150 mJ

Terminal Finish :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

2.7 Ω @ 1.4A, 10V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Power Dissipation-Max :

3.13W Ta 52W Tc

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

11.2A

Vgs (Max) :

±30V

Terminal Form :

Gull wing

Series :

QFET®

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

2.8A

Number of Elements :

1

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V