FQB34P10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

4 Weeks

FET Type :

P-Channel

Vgs (Max) :

±25V

JESD-609 Code :

e3

Resistance :

60mOhm

Mount :

Surface Mount

Number of Elements :

1

Transistor Element Material :

SILICON

Length :

10.67mm

Terminal Form :

Gull wing

Number of Pins :

3

Turn On Delay Time :

25 ns

Fall Time (Typ) :

210 ns

Continuous Drain Current (ID) :

33.5mA

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

25V

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

100V

Turn-Off Delay Time :

160 ns

Lead Free :

Lead Free

Power Dissipation :

3.75W

Input Capacitance (Ciss) (Max) @ Vds :

2910pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

QFET®

Radiation Hardening :

No

Threshold Voltage :

4V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-100V

Element Configuration :

Single

Current Rating :

-34A

Avalanche Energy Rating (Eas) :

2200 mJ

Rds On (Max) @ Id, Vgs :

60m Ω @ 16.75A, 10V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

33.5A Tc

Drain to Source Breakdown Voltage :

-100V

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 250µA

Pbfree Code :

yes

Power Dissipation-Max :

3.75W Ta 155W Tc

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Rise Time :

250ns

Weight :

1.31247g

Height :

4.83mm

JESD-30 Code :

R-PSSO-G2

Published :

2017

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Nominal Vgs :

4 V

Width :

9.65mm