FQB34P10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

60mOhm

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

2200 mJ

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Turn-Off Delay Time :

160 ns

Input Capacitance (Ciss) (Max) @ Vds :

2910pF @ 25V

Threshold Voltage :

4V

JESD-609 Code :

e3

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Voltage - Rated DC :

-100V

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

210 ns

Number of Pins :

3

Series :

QFET®

Number of Terminations :

2

Width :

9.65mm

Published :

2017

Mount :

Surface Mount

Continuous Drain Current (ID) :

33.5mA

Lead Free :

Lead Free

Pbfree Code :

yes

Transistor Element Material :

SILICON

Radiation Hardening :

No

Current Rating :

-34A

Drain to Source Voltage (Vdss) :

100V

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Nominal Vgs :

4 V

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Length :

10.67mm

Power Dissipation-Max :

3.75W Ta 155W Tc

Gate to Source Voltage (Vgs) :

25V

Turn On Delay Time :

25 ns

Rise Time :

250ns

Height :

4.83mm

Power Dissipation :

3.75W

Rds On (Max) @ Id, Vgs :

60m Ω @ 16.75A, 10V

Transistor Application :

SWITCHING

Factory Lead Time :

4 Weeks

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

-100V

REACH SVHC :

No SVHC

Vgs (Max) :

±25V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

33.5A Tc

Weight :

1.31247g