FQB34P10TM
- Mfr.Part #
- FQB34P10TM
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 33.5A D2PAK
- Stock
- 1,429
- In Stock :
- 1,429
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- -100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 33.5mA
- Threshold Voltage :
- 4V
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 33.5A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 3.75W Ta 155W Tc
- Length :
- 10.67mm
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- ECCN Code :
- EAR99
- Power Dissipation :
- 3.75W
- Input Capacitance (Ciss) (Max) @ Vds :
- 2910pF @ 25V
- Pbfree Code :
- yes
- Number of Terminations :
- 2
- JESD-30 Code :
- R-PSSO-G2
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 16.75A, 10V
- FET Type :
- P-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 100V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Nominal Vgs :
- 4 V
- Voltage - Rated DC :
- -100V
- Resistance :
- 60mOhm
- Width :
- 9.65mm
- JESD-609 Code :
- e3
- Height :
- 4.83mm
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 2200 mJ
- Weight :
- 1.31247g
- Fall Time (Typ) :
- 210 ns
- Gate to Source Voltage (Vgs) :
- 25V
- Published :
- 2017
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Series :
- QFET®
- Lead Free :
- Lead Free
- Current Rating :
- -34A
- Turn-Off Delay Time :
- 160 ns
- Turn On Delay Time :
- 25 ns
- Number of Pins :
- 3
- Rise Time :
- 250ns
- Vgs (Max) :
- ±25V
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- REACH SVHC :
- No SVHC
- Datasheets
- FQB34P10TM
FQB34P10TM Documents

P-Channel Tape & Reel (TR) 60m Ω @ 16.75A, 10V ±25V 2910pF @ 25V 110nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB34P10TM Description
The FQB34P10TM is a QFET? P-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology FQB34P10TM has been specially tailored to reduce ON-state resistance, and provide superior switching performance and high avalanche energy strength. The onsemi FQB34P10TM is suitable for switched-mode power supplies, audio amplifiers, and variable switching power applications.
FQB34P10TM Features
-
Low gate charge ( Typ. 85nC)
-
Low Crss ( Typ. 170pF)
-
100% avalanche tested
-
175°C maximum junction temperature rating
-
-33.5A, -100V, RDS(on) = 60mΩ(Max.) @VGS = -10 V, ID = -16.75A
FQB34P10TM Applications
-
Industrial
-
Consumer & computing
-
Lighting
-
Solar / UPS
-
Audio / ATX
-
Ballast
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