FQB30N06LTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Fall Time (Typ) :

110 ns

Series :

QFET®

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

60V

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Resistance :

35mOhm

Packaging :

Tape and Reel (TR)

Published :

2001

Weight :

1.31247g

Turn On Delay Time :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Turn-Off Delay Time :

60 ns

Rds On (Max) @ Id, Vgs :

35m Ω @ 16A, 10V

Width :

9.65mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Threshold Voltage :

2.5V

Current Rating :

32A

Operating Mode :

ENHANCEMENT MODE

Rise Time :

210ns

Input Capacitance (Ciss) (Max) @ Vds :

1040pF @ 25V

Height :

4.83mm

Length :

10.67mm

Continuous Drain Current (ID) :

32A

Voltage - Rated DC :

60V

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

FET Type :

N-Channel

Factory Lead Time :

9 Weeks

Power Dissipation-Max :

3.75W Ta 79W Tc

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)

REACH SVHC :

No SVHC

Element Configuration :

Single

Power Dissipation :

3.75W

Pbfree Code :

yes

Case Connection :

DRAIN

JESD-609 Code :

e3

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING