FQB30N06LTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

15 ns

Height :

4.83mm

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Power Dissipation :

3.75W

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

1040pF @ 25V

Threshold Voltage :

2.5V

Series :

QFET®

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Terminal Form :

Gull wing

Element Configuration :

Single

Current Rating :

32A

Power Dissipation-Max :

3.75W Ta 79W Tc

Number of Elements :

1

Pbfree Code :

yes

Weight :

1.31247g

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Published :

2001

Operating Mode :

ENHANCEMENT MODE

Resistance :

35mOhm

Mount :

Surface Mount

Voltage - Rated DC :

60V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Factory Lead Time :

9 Weeks

Width :

9.65mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

60 ns

Transistor Application :

SWITCHING

Lead Free :

Lead Free

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

60V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

32A

Length :

10.67mm

Fall Time (Typ) :

110 ns

Rise Time :

210ns

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Rds On (Max) @ Id, Vgs :

35m Ω @ 16A, 10V

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

JESD-30 Code :

R-PSSO-G2