FQB3N30TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

3.2A Tc

Drain Current-Max (Abs) (ID) :

3.2A

Pin Count :

3

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

140 mJ

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 1.6A, 10V

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

3.13W Ta 55W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Case Connection :

DRAIN

Series :

QFET®

Drain to Source Voltage (Vdss) :

300V

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

300V

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Qualification Status :

COMMERCIAL

Pulsed Drain Current-Max (IDM) :

12.8A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Packaging :

Tape and Reel (TR)