FQB32N12V2TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Surface Mount :

yes

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

MATTE TIN

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

120V

Drain Current-Max (Abs) (ID) :

32A

Drain-source On Resistance-Max :

0.05Ohm

Pulsed Drain Current-Max (IDM) :

128A

Series :

QFET®

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Additional Feature :

FAST SWITCHING

FET Type :

N-Channel

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

439 mJ

Reach Compliance Code :

Unknown

Pin Count :

3

Rds On (Max) @ Id, Vgs :

50m Ω @ 16A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1.86pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

120V

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Terminal Form :

Gull wing

Number of Elements :

1

Power Dissipation-Max :

3.75W Ta 150W Tc