FQB34N20LTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Feedback Cap-Max (Crss) :

67 pF

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Height :

4.83mm

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 5V

Current Rating :

31A

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Fall Time (Typ) :

370 ns

Vgs (Max) :

±20V

Weight :

1.31247g

Voltage - Rated DC :

200V

Nominal Vgs :

2 V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Termination :

SMD/SMT

FET Type :

N-Channel

Power Dissipation :

3.13W

Turn On Delay Time :

45 ns

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 21 hours ago)

Vgs(th) (Max) @ Id :

2V @ 250μA

Factory Lead Time :

4 Weeks

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 25V

Lead Free :

Lead Free

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Number of Pins :

2

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

200V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Threshold Voltage :

2V

Rise Time :

520ns

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Series :

QFET®

Dual Supply Voltage :

200V

Element Configuration :

Single

ECCN Code :

EAR99

Turn-Off Delay Time :

170 ns

Continuous Drain Current (ID) :

31A

Width :

9.65mm

Published :

2000

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

3.13W Ta 180W Tc

Avalanche Energy Rating (Eas) :

640 mJ

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

75m Ω @ 15.5A, 10V

Resistance :

75mOhm

Length :

10.67mm

Terminal Form :

Gull wing