FQB34N20LTM
- Mfr.Part #
- FQB34N20LTM
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 31A D2PAK
- Stock
- 15,842
- In Stock :
- 15,842
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Height :
- 4.83mm
- Transistor Application :
- SWITCHING
- Number of Pins :
- 2
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 15.5A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 5V
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 3900pF @ 25V
- Published :
- 2000
- Lifecycle Status :
- ACTIVE (Last Updated: 21 hours ago)
- Avalanche Energy Rating (Eas) :
- 640 mJ
- Turn On Delay Time :
- 45 ns
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 200V
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 3.13W Ta 180W Tc
- Fall Time (Typ) :
- 370 ns
- Series :
- QFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Power Dissipation :
- 3.13W
- Continuous Drain Current (ID) :
- 31A
- Width :
- 9.65mm
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn-Off Delay Time :
- 170 ns
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- Packaging :
- Cut Tape (CT)
- Current - Continuous Drain (Id) @ 25°C :
- 31A Tc
- Number of Elements :
- 1
- Dual Supply Voltage :
- 200V
- Terminal Form :
- Gull wing
- Nominal Vgs :
- 2 V
- Factory Lead Time :
- 4 Weeks
- Rise Time :
- 520ns
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Termination :
- SMD/SMT
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Current Rating :
- 31A
- Element Configuration :
- Single
- Resistance :
- 75mOhm
- Drain to Source Breakdown Voltage :
- 200V
- Weight :
- 1.31247g
- Feedback Cap-Max (Crss) :
- 67 pF
- Threshold Voltage :
- 2V
- Length :
- 10.67mm
- REACH SVHC :
- No SVHC
- Datasheets
- FQB34N20LTM
FQB34N20LTM Documents

N-Channel Cut Tape (CT) 75m Ω @ 15.5A, 10V ±20V 3900pF @ 25V 72nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB34N20LTM Description
The FQB34N20LTM is a QFET? N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology FQB34N20LTM has been specially tailored to reduce ON-state resistance, and provide superior switching performance and high avalanche energy strength. It is suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQB34N20LTM Features
-
31A, 200V, RDS(on) = 75mΩ(Max.) @VGS = 10 V, ID = 15.5A
-
Low gate charge ( Typ. 55nC)
-
Low Crss ( Typ. 52pF)
-
100% avalanche tested
-
Low-level gate drive requirement allows direct operation from logic drivers
-
RoHS compliant
FQB34N20LTM Applications
-
Switched-mode power supplies
-
Active power factor correction (PFC)
-
Electronic lamp ballasts
-
Linear power supply
-
Mobile phone chargers
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