FQB33N10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

110 ns

Continuous Drain Current (ID) :

33A

Reach Compliance Code :

not_compliant

Number of Terminations :

2

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

33A Tc

FET Type :

N-Channel

Turn-Off Delay Time :

80 ns

Mounting Type :

Surface Mount

Mount :

Surface Mount

Height :

4.83mm

Number of Pins :

3

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

52m Ω @ 16.5A, 10V

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Vgs (Max) :

±25V

Weight :

1.31247g

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

11 Weeks

Resistance :

52mOhm

Voltage - Rated DC :

100V

Power Dissipation-Max :

3.75W Ta 127W Tc

Width :

9.65mm

Power Dissipation :

3.75W

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

QFET®

Gate to Source Voltage (Vgs) :

25V

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Length :

10.67mm

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

15 ns

Threshold Voltage :

4V

Rise Time :

195ns

Number of Elements :

1

Published :

2000

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

33A

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

100V

RoHS Status :

ROHS3 Compliant