FQB33N10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

4V

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Continuous Drain Current (ID) :

33A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

195ns

Resistance :

52mOhm

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Fall Time (Typ) :

110 ns

Number of Elements :

1

REACH SVHC :

No SVHC

Turn-Off Delay Time :

80 ns

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height :

4.83mm

Series :

QFET®

ECCN Code :

EAR99

Mount :

Surface Mount

Contact Plating :

Tin

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±25V

Reach Compliance Code :

not_compliant

Gate to Source Voltage (Vgs) :

25V

Published :

2000

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

15 ns

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

52m Ω @ 16.5A, 10V

Weight :

1.31247g

Pbfree Code :

yes

Transistor Application :

SWITCHING

Current Rating :

33A

Number of Terminations :

2

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Power Dissipation-Max :

3.75W Ta 127W Tc

Voltage - Rated DC :

100V

Length :

10.67mm

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Drain to Source Breakdown Voltage :

100V

Width :

9.65mm

Lead Free :

Lead Free

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Factory Lead Time :

11 Weeks

Power Dissipation :

3.75W