FQB33N10TM
- Mfr.Part #
- FQB33N10TM
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 33A D2PAK
- Stock
- 7,698
- In Stock :
- 7,698
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 110 ns
- Continuous Drain Current (ID) :
- 33A
- Reach Compliance Code :
- not_compliant
- Number of Terminations :
- 2
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 80 ns
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Height :
- 4.83mm
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 20 hours ago)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 52m Ω @ 16.5A, 10V
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±25V
- Weight :
- 1.31247g
- Input Capacitance (Ciss) (Max) @ Vds :
- 1500pF @ 25V
- JESD-30 Code :
- R-PSSO-G2
- Gate Charge (Qg) (Max) @ Vgs :
- 51nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 11 Weeks
- Resistance :
- 52mOhm
- Voltage - Rated DC :
- 100V
- Power Dissipation-Max :
- 3.75W Ta 127W Tc
- Width :
- 9.65mm
- Power Dissipation :
- 3.75W
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Series :
- QFET®
- Gate to Source Voltage (Vgs) :
- 25V
- Contact Plating :
- Tin
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Length :
- 10.67mm
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 15 ns
- Threshold Voltage :
- 4V
- Rise Time :
- 195ns
- Number of Elements :
- 1
- Published :
- 2000
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 33A
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- FQB33N10TM
FQB33N10TM Documents

N-Channel Tape & Reel (TR) 52m Ω @ 16.5A, 10V ±25V 1500pF @ 25V 51nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB33N10TM Description
A 100V N-channel QFET? MOSFET made with planar stripe and DMOS technology is called the FQB33N10TM. The on-state resistance of these advanced MOSFETs has been specifically reduced, and they also offer enhanced switching performance and great avalanche energy strength. It is appropriate for applications requiring variable switching power, DC motor control, audio amplifiers, and switched mode power supplies.
FQB33N10TM Features
-
Low gate charge (typical 38nC)
-
Low Crss (typical 62pF)
-
100% avalanche tested
-
±25V gate source voltage
-
40°C/W thermal resistance, junction to ambient
-
1.18°C/W thermal resistance, junction to case
FQB33N10TM Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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