FQB33N10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

11 Weeks

Rds On (Max) @ Id, Vgs :

52m Ω @ 16.5A, 10V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

25V

Published :

2000

Width :

9.65mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Case Connection :

DRAIN

Terminal Form :

Gull wing

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Threshold Voltage :

4V

Contact Plating :

Tin

Weight :

1.31247g

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Element Configuration :

Single

Fall Time (Typ) :

110 ns

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

80 ns

Drain to Source Breakdown Voltage :

100V

Mounting Type :

Surface Mount

Series :

QFET®

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Turn On Delay Time :

15 ns

Lead Free :

Lead Free

Qualification Status :

Not Qualified

Power Dissipation-Max :

3.75W Ta 127W Tc

Height :

4.83mm

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Number of Pins :

3

Mount :

Surface Mount

Length :

10.67mm

Continuous Drain Current (ID) :

33A

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

195ns

Resistance :

52mOhm

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Current Rating :

33A

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Voltage - Rated DC :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Power Dissipation :

3.75W

JESD-609 Code :

e3

Vgs (Max) :

±25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~175°C TJ