FQB33N10LTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

10 Weeks

Voltage - Rated DC :

100V

Rise Time :

470ns

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 5V

Series :

QFET®

JESD-609 Code :

e3

Continuous Drain Current (ID) :

33A

Rds On (Max) @ Id, Vgs :

52m Ω @ 16.5A, 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Width :

9.65mm

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Mount :

Surface Mount

FET Type :

N-Channel

Turn-Off Delay Time :

70 ns

Number of Elements :

1

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Current Rating :

33A

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Number of Pins :

3

Power Dissipation-Max :

3.75W Ta 127W Tc

Height :

4.83mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1630pF @ 25V

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Length :

10.67mm

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Published :

2000

Radiation Hardening :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Element Configuration :

Single

Case Connection :

DRAIN

Power Dissipation :

3.75W

Weight :

1.31247g

Threshold Voltage :

2V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)

Turn On Delay Time :

17 ns

Resistance :

52mOhm

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

100V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2V @ 250μA

Fall Time (Typ) :

120 ns