FQB33N10LTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.75W Ta 127W Tc

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Width :

9.65mm

Factory Lead Time :

10 Weeks

Threshold Voltage :

2V

Rds On (Max) @ Id, Vgs :

52m Ω @ 16.5A, 10V

Fall Time (Typ) :

120 ns

Current Rating :

33A

Number of Pins :

3

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

1630pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Element Configuration :

Single

JESD-609 Code :

e3

FET Type :

N-Channel

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Resistance :

52mOhm

Continuous Drain Current (ID) :

33A

Height :

4.83mm

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

1.31247g

Number of Terminations :

2

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 5V

Mount :

Surface Mount

Turn-Off Delay Time :

70 ns

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Rise Time :

470ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Power Dissipation :

3.75W

Operating Temperature :

-55°C~175°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)

Pbfree Code :

yes

Series :

QFET®

Turn On Delay Time :

17 ns

ECCN Code :

EAR99

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Length :

10.67mm

Case Connection :

DRAIN

Radiation Hardening :

No

Voltage - Rated DC :

100V

Published :

2000

Terminal Finish :

Tin (Sn)

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

100V