FQB32N12V2TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Qualification Status :

COMMERCIAL

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

120V

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

128A

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1.86pF @ 25V

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

120V

Avalanche Energy Rating (Eas) :

439 mJ

Transistor Element Material :

SILICON

Additional Feature :

FAST SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

QFET®

Drain Current-Max (Abs) (ID) :

32A

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Power Dissipation-Max :

3.75W Ta 150W Tc

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

50m Ω @ 16A, 10V

Drain-source On Resistance-Max :

0.05Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Number of Elements :

1

Number of Terminations :

2

Reach Compliance Code :

Unknown

Terminal Form :

Gull wing

Pbfree Code :

yes

Pin Count :

3

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260