FQB3N30TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Terminal Finish :

MATTE TIN

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

3.2A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

140 mJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Transistor Element Material :

SILICON

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 1.6A, 10V

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

300V

Drain Current-Max (Abs) (ID) :

3.2A

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Mounting Type :

Surface Mount

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Unknown

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Series :

QFET®

Number of Elements :

1

Drain to Source Voltage (Vdss) :

300V

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

12.8A

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

3.13W Ta 55W Tc

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL