FQB3P20TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

200V

Qualification Status :

COMMERCIAL

Avalanche Energy Rating (Eas) :

150 mJ

DS Breakdown Voltage-Min :

200V

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

11.2A

Rds On (Max) @ Id, Vgs :

2.7 Ω @ 1.4A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Terminal Position :

Single

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

2.8A Tc

FET Type :

P-Channel

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

2.8A

Pin Count :

3

Surface Mount :

yes

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Power Dissipation-Max :

3.13W Ta 52W Tc

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Series :

QFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

NOT SPECIFIED