FQB3N60CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

600V

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

600V

Case Connection :

DRAIN

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

12A

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

150 mJ

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

COMMERCIAL

Power Dissipation-Max :

75W Tc

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 1.5A, 10V

Vgs (Max) :

±30V

Reach Compliance Code :

Unknown

Series :

QFET®

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

565pF @ 25V

Drain Current-Max (Abs) (ID) :

3A

Terminal Finish :

NOT SPECIFIED