FQB3N60CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

600V

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 1.5A, 10V

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Unknown

Number of Terminations :

2

Power Dissipation-Max :

75W Tc

Packaging :

Tape and Reel (TR)

Pin Count :

3

Terminal Finish :

NOT SPECIFIED

FET Type :

N-Channel

Qualification Status :

COMMERCIAL

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

600V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

3A Tc

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

150 mJ

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

565pF @ 25V

Drain Current-Max (Abs) (ID) :

3A

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

12A

JESD-30 Code :

R-PSSO-G2

Series :

QFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing