FQB3N60CTM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Drain to Source Voltage (Vdss) :

600V

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Mounting Type :

Surface Mount

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Transistor Element Material :

SILICON

Power Dissipation-Max :

75W Tc

Qualification Status :

COMMERCIAL

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 1.5A, 10V

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

3A

DS Breakdown Voltage-Min :

600V

Avalanche Energy Rating (Eas) :

150 mJ

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

QFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

12A

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

565pF @ 25V

Terminal Finish :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA