FQB3N40TM

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Mfr.Part #
FQB3N40TM
Manufacturer
Fairchild Semiconductor
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 400V 2.5A D2PAK
Stock
1,490
In Stock :
1,490

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Case Connection :
DRAIN
Series :
QFET®
Qualification Status :
COMMERCIAL
Vgs (Max) :
±30V
Current - Continuous Drain (Id) @ 25°C :
2.5A Tc
Avalanche Energy Rating (Eas) :
120 mJ
Operating Mode :
ENHANCEMENT MODE
Gate Charge (Qg) (Max) @ Vgs :
7.5nC @ 10V
Pulsed Drain Current-Max (IDM) :
10A
Pbfree Code :
yes
Rds On (Max) @ Id, Vgs :
3.4 Ω @ 1.25A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
260
Drain Current-Max (Abs) (ID) :
2.5A
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
JESD-30 Code :
R-PSSO-G2
Number of Elements :
1
Pin Count :
3
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Surface Mount :
yes
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds :
230pF @ 25V
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Position :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
3.13W Ta 55W Tc
Number of Terminations :
2
Terminal Form :
Gull wing
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Terminal Finish :
MATTE TIN
Drain to Source Voltage (Vdss) :
400V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
Unknown
Vgs(th) (Max) @ Id :
5V @ 250μA
DS Breakdown Voltage-Min :
400V
Transistor Element Material :
SILICON
Datasheets
FQB3N40TM
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQB3N40TM from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Mounting Type:Surface Mount, FQB3N40TM pinout, FQB3N40TM datasheet PDF, FQB3N40TM amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQB3N40TM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQB3N40TM


N-Channel Tape & Reel (TR) 3.4 Ω @ 1.25A, 10V ±30V 230pF @ 25V 7.5nC @ 10V 400V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FQB3N40TM Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 120 mJ.The maximum input capacitance of this device is 230pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 2.5A.There is no pulsed drain current maximum for this device based on its rated peak drain current 10A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 400V.The drain-to-source voltage (Vdss) of this transistor needs to be at 400V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

FQB3N40TM Features


the avalanche energy rating (Eas) is 120 mJ
based on its rated peak drain current 10A.
a 400V drain to source voltage (Vdss)


FQB3N40TM Applications


There are a lot of Rochester Electronics, LLC
FQB3N40TM applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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