FQB3N40TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

120 mJ

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

3.13W Ta 55W Tc

Number of Elements :

1

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

10A

Drain Current-Max (Abs) (ID) :

2.5A

Qualification Status :

COMMERCIAL

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

400V

Packaging :

Tape and Reel (TR)

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 1.25A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

5V @ 250μA

Series :

QFET®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

400V