FQB1P50TM
- Mfr.Part #
- FQB1P50TM
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 500V 1.5A D2PAK
- Stock
- 22,921
- In Stock :
- 22,921
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- FET Type :
- P-Channel
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 1.5A
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 10.5 Ω @ 750mA, 10V
- Reach Compliance Code :
- not_compliant
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Rated DC :
- -500V
- Rise Time :
- 25ns
- Height :
- 4.83mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Finish :
- Tin (Sn)
- Turn-Off Delay Time :
- 27 ns
- Weight :
- 1.31247g
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Vgs (Max) :
- ±30V
- Current Rating :
- -1.5A
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 30 ns
- JESD-609 Code :
- e3
- Power Dissipation :
- 3.13W
- Series :
- QFET®
- Published :
- 2017
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Lifecycle Status :
- ACTIVE (Last Updated: 17 hours ago)
- Factory Lead Time :
- 4 Weeks
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- -500V
- Turn On Delay Time :
- 9 ns
- JESD-30 Code :
- R-PSSO-G2
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Pulsed Drain Current-Max (IDM) :
- 6A
- Width :
- 10.67mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- Length :
- 9.65mm
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 500V
- Current - Continuous Drain (Id) @ 25°C :
- 1.5A Tc
- Power Dissipation-Max :
- 3.13W Ta 63W Tc
- Transistor Element Material :
- SILICON
- Datasheets
- FQB1P50TM
FQB1P50TM Documents

P-Channel Tape & Reel (TR) 10.5 Ω @ 750mA, 10V ±30V 350pF @ 25V 14nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
The FQB1P50TM P-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. The device is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQB1P50TM Features
Low Gate Charge (Typ. 11 nC)
Low Crss (Typ. 6.0 pF)
100% Avalanche Tested
RoHS Compliant
Lead Free
Vgs(th) (Max) @ Id: 5V @ 250 μA
FQB1P50TM Applications
Switch electronic signals
Oscillators
Modulators
Detectors
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
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