FQB1P50TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

9 ns

Mount :

Surface Mount

FET Type :

P-Channel

Power Dissipation :

3.13W

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

3.13W Ta 63W Tc

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Length :

9.65mm

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Transistor Element Material :

SILICON

Element Configuration :

Single

Number of Elements :

1

Rise Time :

25ns

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

1.5A Tc

Lead Free :

Lead Free

Current Rating :

-1.5A

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

JESD-609 Code :

e3

Voltage - Rated DC :

-500V

Published :

2017

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lifecycle Status :

ACTIVE (Last Updated: 17 hours ago)

Series :

QFET®

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Weight :

1.31247g

Continuous Drain Current (ID) :

1.5A

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Drain to Source Voltage (Vdss) :

500V

Number of Terminations :

2

Width :

10.67mm

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

10.5 Ω @ 750mA, 10V

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

-500V

Vgs(th) (Max) @ Id :

5V @ 250μA

Pulsed Drain Current-Max (IDM) :

6A

Vgs (Max) :

±30V

Fall Time (Typ) :

30 ns

Operating Mode :

ENHANCEMENT MODE

Height :

4.83mm

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Turn-Off Delay Time :

27 ns

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V