FQB11N40CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Vgs (Max) :

±30V

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Weight :

1.31247g

Rds On (Max) @ Id, Vgs :

530m Ω @ 5.25A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1090pF @ 25V

Transistor Application :

SWITCHING

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Rise Time :

89ns

Current - Continuous Drain (Id) @ 25°C :

10.5A Tc

Lifecycle Status :

ACTIVE (Last Updated: 14 hours ago)

Power Dissipation-Max :

135W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99

Power Dissipation :

135W

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

FAST SWITCHING

Turn On Delay Time :

14 ns

Continuous Drain Current (ID) :

10.5A

Fall Time (Typ) :

81 ns

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

400V

Radiation Hardening :

No

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

42A

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Series :

QFET®

Current Rating :

10.5A

Number of Terminations :

2

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Voltage - Rated DC :

400V

Turn-Off Delay Time :

81 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

8 Weeks

Number of Pins :

3

Packaging :

Tape and Reel (TR)