FQB11N40CTM
- Mfr.Part #
- FQB11N40CTM
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 10.5A D2PAK
- Stock
- 10,828
- In Stock :
- 10,828
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Rise Time :
- 89ns
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 10.5A
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 81 ns
- Drain to Source Breakdown Voltage :
- 400V
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Weight :
- 1.31247g
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 530m Ω @ 5.25A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 10.5A Tc
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±30V
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 42A
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 81 ns
- Packaging :
- Tape and Reel (TR)
- Series :
- QFET®
- Current Rating :
- 10.5A
- Power Dissipation-Max :
- 135W Tc
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 1090pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 400V
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Power Dissipation :
- 135W
- Number of Terminations :
- 2
- Additional Feature :
- FAST SWITCHING
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn On Delay Time :
- 14 ns
- Datasheets
- FQB11N40CTM

N-Channel Tape & Reel (TR) 530m Ω @ 5.25A, 10V ±30V 1090pF @ 25V 35nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB11N40CTM Overview
A device's maximum input capacitance is 1090pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 10.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=400V, and this device has a drain-to-source breakdown voltage of 400V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 81 ns.Its maximum pulsed drain current is 42A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
FQB11N40CTM Features
a continuous drain current (ID) of 10.5A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 81 ns
based on its rated peak drain current 42A.
FQB11N40CTM Applications
There are a lot of ON Semiconductor
FQB11N40CTM applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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