FQB11P06TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Pbfree Code :

yes

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

45.6A

Fall Time (Typ) :

45 ns

ECCN Code :

EAR99

Width :

9.65mm

Factory Lead Time :

4 Weeks

Rise Time :

40ns

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

25V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Transistor Application :

SWITCHING

Weight :

1.31247g

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Power Dissipation-Max :

3.13W Ta 53W Tc

Series :

QFET®

Turn On Delay Time :

6.5 ns

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

11.4A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

4.83mm

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

Vgs (Max) :

±25V

Lead Free :

Lead Free

Number of Elements :

1

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

60V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

3.13W

Turn-Off Delay Time :

15 ns

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

11.4A Tc

Voltage - Rated DC :

-60V

Length :

10.67mm

Number of Pins :

3

Drain to Source Breakdown Voltage :

-60V

Rds On (Max) @ Id, Vgs :

175m Ω @ 5.7A, 10V

Current Rating :

-11.4A