FQB11P06TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Published :

2013

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Pulsed Drain Current-Max (IDM) :

45.6A

Current - Continuous Drain (Id) @ 25°C :

11.4A Tc

Lead Free :

Lead Free

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

60V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

3.13W Ta 53W Tc

Rds On (Max) @ Id, Vgs :

175m Ω @ 5.7A, 10V

Number of Pins :

3

Weight :

1.31247g

Turn-Off Delay Time :

15 ns

Drain to Source Breakdown Voltage :

-60V

Case Connection :

DRAIN

Width :

9.65mm

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Voltage - Rated DC :

-60V

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Turn On Delay Time :

6.5 ns

Fall Time (Typ) :

45 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

4 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Mounting Type :

Surface Mount

Rise Time :

40ns

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

11.4A

Power Dissipation :

3.13W

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Current Rating :

-11.4A

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Length :

10.67mm

Height :

4.83mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

25V

Vgs (Max) :

±25V

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Series :

QFET®

JESD-609 Code :

e3