FQB11P06TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

9.65mm

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

45.6A

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

3.13W Ta 53W Tc

Power Dissipation :

3.13W

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Voltage - Rated DC :

-60V

Length :

10.67mm

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current Rating :

-11.4A

Turn On Delay Time :

6.5 ns

Rds On (Max) @ Id, Vgs :

175m Ω @ 5.7A, 10V

Factory Lead Time :

4 Weeks

Drain to Source Breakdown Voltage :

-60V

ECCN Code :

EAR99

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Series :

QFET®

Transistor Application :

SWITCHING

Fall Time (Typ) :

45 ns

Element Configuration :

Single

Continuous Drain Current (ID) :

11.4A

Weight :

1.31247g

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

11.4A Tc

Turn-Off Delay Time :

15 ns

Vgs (Max) :

±25V

Rise Time :

40ns

Height :

4.83mm

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

Drain to Source Voltage (Vdss) :

60V

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Published :

2013

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

25V

Packaging :

Tape and Reel (TR)