FQB10N20CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

200V

Drain Current-Max (Abs) (ID) :

9.5A

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Mounting Type :

Surface Mount

Power Dissipation-Max :

72W Tc

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

360m Ω @ 4.75A, 10V

Case Connection :

DRAIN

Qualification Status :

COMMERCIAL

Vgs (Max) :

±30V

Drain-source On Resistance-Max :

0.36ohm

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

210 mJ

Pbfree Code :

yes

Terminal Finish :

MATTE TIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

200V

Number of Terminations :

2

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

9.5A Tc

Pin Count :

3

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

Not Applicable

Pulsed Drain Current-Max (IDM) :

38A

Series :

QFET®