FQB10N20CTM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

38A

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Vgs (Max) :

±30V

Terminal Finish :

MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Series :

QFET®

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

72W Tc

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

Not Applicable

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

360m Ω @ 4.75A, 10V

Number of Terminations :

2

DS Breakdown Voltage-Min :

200V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.36ohm

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

210 mJ

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

9.5A Tc

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

COMMERCIAL

Pin Count :

3

Reach Compliance Code :

Unknown

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

200V

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

9.5A

Time@Peak Reflow Temperature-Max (s) :

Not Applicable