FQB11N40TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

3.13W Ta 147W Tc

Current - Continuous Drain (Id) @ 25°C :

11.4A Tc

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

1.4pF @ 25V

Avalanche Energy Rating (Eas) :

520 mJ

Drain-source On Resistance-Max :

0.48Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

COMMERCIAL

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Pbfree Code :

yes

Surface Mount :

yes

Terminal Position :

Single

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Drain to Source Voltage (Vdss) :

400V

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

11.4A

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

400V

Vgs(th) (Max) @ Id :

5V @ 250μA

Reach Compliance Code :

Unknown

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Pulsed Drain Current-Max (IDM) :

46A

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

480m Ω @ 5.7A, 10V

FET Type :

N-Channel