FQB12N60CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

650m Ω @ 6A, 10V

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Qualification Status :

COMMERCIAL

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

48A

Reach Compliance Code :

Unknown

Vgs (Max) :

±30V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2.29pF @ 25V

Drain-source On Resistance-Max :

0.65Ohm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Series :

QFET®

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

600V

Terminal Position :

Single

Pin Count :

3

Avalanche Energy Rating (Eas) :

870 mJ

DS Breakdown Voltage-Min :

600V

Power Dissipation-Max :

3.13W Ta 225W Tc

Drain Current-Max (Abs) (ID) :

12A

Transistor Element Material :

SILICON

Surface Mount :

yes