FQB10N50CFTM-WS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

610m Ω @ 5A, 10V

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V

Power Dissipation :

143W

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Weight :

1.31247g

Number of Pins :

3

Factory Lead Time :

4 Weeks

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

500V

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

Transistor Element Material :

SILICON

Series :

FRFET®, QFET™

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

40A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Vgs(th) (Max) @ Id :

4V @ 250µA

Pbfree Code :

yes

DS Breakdown Voltage-Min :

500V

Number of Elements :

1

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

143W Tc

Continuous Drain Current (ID) :

10A

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

825 mJ

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Number of Terminations :

2