FQB10N50CFTM-WS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Mount :

Surface Mount

DS Breakdown Voltage-Min :

500V

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

30V

Series :

FRFET®, QFET™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Weight :

1.31247g

Drain to Source Voltage (Vdss) :

500V

Vgs(th) (Max) @ Id :

4V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V

Vgs (Max) :

±30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

610m Ω @ 5A, 10V

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Power Dissipation :

143W

Avalanche Energy Rating (Eas) :

825 mJ

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

40A

Number of Pins :

3

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pbfree Code :

yes

Number of Elements :

1

Terminal Form :

Gull wing

Power Dissipation-Max :

143W Tc

Factory Lead Time :

4 Weeks

Continuous Drain Current (ID) :

10A

Operating Temperature :

-55°C~150°C TJ