FQB10N50CFTM-WS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Power Dissipation :

143W

Pulsed Drain Current-Max (IDM) :

40A

Avalanche Energy Rating (Eas) :

825 mJ

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

10A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

143W Tc

Factory Lead Time :

4 Weeks

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

610m Ω @ 5A, 10V

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

500V

Mounting Type :

Surface Mount

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Vgs (Max) :

±30V

Number of Pins :

3

Series :

FRFET®, QFET™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

FET Type :

N-Channel

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

500V

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V

Weight :

1.31247g