FQB12N60CTM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Qualification Status :

COMMERCIAL

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

12A

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

QFET®

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

600V

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

48A

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Reach Compliance Code :

Unknown

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

3.13W Ta 225W Tc

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

600V

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

650m Ω @ 6A, 10V

Drain-source On Resistance-Max :

0.65Ohm

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

2.29pF @ 25V

Avalanche Energy Rating (Eas) :

870 mJ