FQB10N20LTM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

360m Ω @ 5A, 10V

Reach Compliance Code :

Unknown

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Pbfree Code :

yes

Transistor Application :

SWITCHING

Number of Elements :

1

Terminal Form :

Gull wing

JESD-609 Code :

e3

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Series :

QFET®

Qualification Status :

COMMERCIAL

Drain to Source Voltage (Vdss) :

200V

Drain-source On Resistance-Max :

0.38Ohm

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Count :

3

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

180 mJ

DS Breakdown Voltage-Min :

200V

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

830pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Pulsed Drain Current-Max (IDM) :

40A

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

10A

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Power Dissipation-Max :

3.13W Ta 87W Tc

Peak Reflow Temperature (Cel) :

260