FQB10N20LTM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

200V

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

40A

Qualification Status :

COMMERCIAL

Drain to Source Voltage (Vdss) :

200V

Number of Terminations :

2

Terminal Form :

Gull wing

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Power Dissipation-Max :

3.13W Ta 87W Tc

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.38Ohm

Reach Compliance Code :

Unknown

Surface Mount :

yes

Transistor Application :

SWITCHING

Pin Count :

3

Terminal Finish :

MATTE TIN

Case Connection :

DRAIN

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Avalanche Energy Rating (Eas) :

180 mJ

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

10A

Vgs(th) (Max) @ Id :

2V @ 250μA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Series :

QFET®

Rds On (Max) @ Id, Vgs :

360m Ω @ 5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

830pF @ 25V