FQB19N20TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Number of Terminations :

2

Turn On Delay Time :

20 ns

Rise Time :

190ns

Lifecycle Status :

ACTIVE (Last Updated: 16 hours ago)

Case Connection :

DRAIN

Voltage - Rated DC :

200V

Rds On (Max) @ Id, Vgs :

150m Ω @ 9.7A, 10V

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Series :

QFET®

Avalanche Energy Rating (Eas) :

250 mJ

Number of Elements :

1

Weight :

1.31247g

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

3.13W Ta 140W Tc

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Drain to Source Breakdown Voltage :

200V

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 25V

Resistance :

150mOhm

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

ECCN Code :

EAR99

Factory Lead Time :

4 Weeks

Vgs(th) (Max) @ Id :

5V @ 250μA

Current Rating :

19.4A

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Fall Time (Typ) :

80 ns

Pulsed Drain Current-Max (IDM) :

78A

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

3.13W

Lead Free :

Lead Free

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

19.4A Tc

Turn-Off Delay Time :

55 ns

Vgs (Max) :

±30V

Element Configuration :

Single

Continuous Drain Current (ID) :

19.4A