FQB19N20LTM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

3.13W

Lead Free :

Lead Free

Nominal Vgs :

2 V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 5V

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 16 hours ago)

Threshold Voltage :

2V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Pbfree Code :

yes

Power Dissipation-Max :

3.13W Ta 140W Tc

FET Type :

N-Channel

Height :

4.83mm

Current :

17A

Number of Pins :

3

Voltage :

200V

Drain to Source Breakdown Voltage :

200V

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

250 mJ

Element Configuration :

Single

Continuous Drain Current (ID) :

21mA

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

180 ns

Turn On Delay Time :

35 ns

Contact Plating :

Tin

Length :

10.67mm

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Voltage - Rated DC :

200V

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Vgs(th) (Max) @ Id :

2V @ 250μA

Rise Time :

300ns

Turn-Off Delay Time :

130 ns

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Resistance :

140mOhm

Number of Terminations :

2

Published :

2000

Current Rating :

21A

Rds On (Max) @ Id, Vgs :

140m Ω @ 10.5A, 10V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Series :

QFET®

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Factory Lead Time :

7 Weeks

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

9.65mm

REACH SVHC :

No SVHC

Radiation Hardening :

No