FQB19N10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

100mOhm @ 9.5A, 10V

Published :

2000

Power Dissipation-Max :

3.75W Ta 75W Tc

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Supplier Device Package :

D2PAK (TO-263AB)

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Drain to Source Voltage (Vdss) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 25V

Series :

QFET®

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V