FQB19N10LTM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 5V

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

100V

Qualification Status :

COMMERCIAL

Number of Elements :

1

Series :

QFET®

Pin Count :

3

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

220 mJ

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

76A

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

100m Ω @ 9.5A, 10V

Terminal Finish :

MATTE TIN

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

19A

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

100V

Terminal Form :

Gull wing

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 25V

Vgs (Max) :

±20V

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.11Ohm

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

3.75W Ta 75W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

19A Tc