FQB19N10LTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

COMMERCIAL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

100V

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 25V

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain Current-Max (Abs) (ID) :

19A

Series :

QFET®

Power Dissipation-Max :

3.75W Ta 75W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

100V

Rds On (Max) @ Id, Vgs :

100m Ω @ 9.5A, 10V

Number of Elements :

1

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Pbfree Code :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Count :

3

Terminal Position :

Single

Drain-source On Resistance-Max :

0.11Ohm

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Avalanche Energy Rating (Eas) :

220 mJ

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 5V

Terminal Finish :

MATTE TIN

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

76A

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Unknown