FQB17P10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

3.75W Ta 100W Tc

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1.1pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Reach Compliance Code :

Unknown

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

16.5A Tc

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

QFET®

Rds On (Max) @ Id, Vgs :

190m Ω @ 8.25A, 10V

Number of Terminations :

2

FET Type :

P-Channel

Pin Count :

3

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

100V

Qualification Status :

COMMERCIAL

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

580 mJ

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

66A

Drain to Source Voltage (Vdss) :

100V

Drain-source On Resistance-Max :

0.19Ohm

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

16.5A

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single