FQB17N08TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Unknown

Power Dissipation-Max :

3.13W Ta 65W Tc

Drain-source On Resistance-Max :

0.115Ohm

Terminal Finish :

MATTE TIN

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±25V

Drain to Source Voltage (Vdss) :

80V

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

80V

Terminal Position :

Single

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 250µA

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

16.5A

JESD-609 Code :

e3

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

16.5A Tc

Rds On (Max) @ Id, Vgs :

115m Ω @ 8.25A, 10V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Pulsed Drain Current-Max (IDM) :

66A

Series :

QFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

COMMERCIAL

Terminal Form :

Gull wing

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

100 mJ