FQB16N25CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

15.6A Tc

Drain to Source Voltage (Vdss) :

250V

Terminal Finish :

NOT SPECIFIED

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Count :

3

Qualification Status :

COMMERCIAL

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

410 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

250V

Pulsed Drain Current-Max (IDM) :

62.4A

Power Dissipation-Max :

3.13W Ta 139W Tc

Rds On (Max) @ Id, Vgs :

270m Ω @ 7.8A, 10V

Mounting Type :

Surface Mount

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

53.5nC @ 10V

Vgs (Max) :

±30V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.27Ohm

Transistor Element Material :

SILICON

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1.08pF @ 25V

Drain Current-Max (Abs) (ID) :

15.6A

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE