FQB16N15TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

65.6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

16.4A

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Rds On (Max) @ Id, Vgs :

160m Ω @ 8.2A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

150V

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

230 mJ

Current - Continuous Drain (Id) @ 25°C :

16.4A Tc

Drain-source On Resistance-Max :

0.16Ohm

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

150V

Terminal Finish :

MATTE TIN

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Series :

QFET®

Pin Count :

3

Vgs (Max) :

±25V

Terminal Position :

Single

Number of Elements :

1

Reach Compliance Code :

Unknown

Pbfree Code :

yes

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

910pF @ 25V

Power Dissipation-Max :

3.75W Ta 108W Tc

Mounting Type :

Surface Mount