FQB16N15TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Power Dissipation-Max :

3.75W Ta 108W Tc

Number of Terminations :

2

Vgs (Max) :

±25V

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Case Connection :

DRAIN

Number of Elements :

1

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

65.6A

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

150V

Current - Continuous Drain (Id) @ 25°C :

16.4A Tc

Drain Current-Max (Abs) (ID) :

16.4A

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

910pF @ 25V

Series :

QFET®

Avalanche Energy Rating (Eas) :

230 mJ

Terminal Finish :

MATTE TIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

150V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.16Ohm

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

COMMERCIAL

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

160m Ω @ 8.2A, 10V

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

260