FQB15P12TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±30V

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

QFET®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

3.75W Ta 100W Tc

Rds On (Max) @ Id, Vgs :

200m Ω @ 7.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

COMMERCIAL

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.2Ohm

Pulsed Drain Current-Max (IDM) :

60A

DS Breakdown Voltage-Min :

120V

Terminal Form :

Gull wing

FET Type :

P-Channel

Reach Compliance Code :

Unknown

Drain to Source Voltage (Vdss) :

120V

Pin Count :

3

Pbfree Code :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

Surface Mount :

yes

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

15A

Input Capacitance (Ciss) (Max) @ Vds :

1.1pF @ 25V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

1157 mJ

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260