FQB14N30TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

300V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

290m Ω @ 7.2A, 10V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

COMMERCIAL

Drain-source On Resistance-Max :

0.29Ohm

Pin Count :

3

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

600 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

1.36pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

14.4A Tc

Number of Elements :

1

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

14.4A

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

57.6A

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

Reach Compliance Code :

Unknown

Series :

QFET®

DS Breakdown Voltage-Min :

300V

Terminal Position :

Single

Transistor Application :

SWITCHING

Power Dissipation-Max :

3.13W Ta 147W Tc