FQB14N30TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.29Ohm

JESD-609 Code :

e3

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

Terminal Position :

Single

Vgs (Max) :

±30V

Reach Compliance Code :

Unknown

Power Dissipation-Max :

3.13W Ta 147W Tc

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

600 mJ

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

290m Ω @ 7.2A, 10V

Drain Current-Max (Abs) (ID) :

14.4A

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

300V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Series :

QFET®

DS Breakdown Voltage-Min :

300V

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

14.4A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

57.6A

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

5V @ 250μA

Pin Count :

3

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1.36pF @ 25V

Qualification Status :

COMMERCIAL