FQB13N50CTM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Avalanche Energy Rating (Eas) :

860 mJ

Rds On (Max) @ Id, Vgs :

480m Ω @ 6.5A, 10V

Drain-source On Resistance-Max :

0.48Ohm

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Terminal Finish :

MATTE TIN

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

QFET®

Surface Mount :

yes

Pbfree Code :

yes

Power Dissipation-Max :

195W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2.055pF @ 25V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

DS Breakdown Voltage-Min :

500V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

52A

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

500V

Number of Terminations :

2

Case Connection :

DRAIN

Number of Elements :

1

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

13A

Packaging :

Tape and Reel (TR)

Qualification Status :

COMMERCIAL

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

13A Tc

FET Type :

N-Channel

JESD-609 Code :

e3

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2