FQB13N06LTM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.14Ohm

Qualification Status :

COMMERCIAL

Terminal Finish :

MATTE TIN

Power Dissipation-Max :

3.75W Ta 45W Tc

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

13.6A Tc

Series :

QFET®

Case Connection :

DRAIN

JESD-609 Code :

e3

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

54.4A

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 5V

Rds On (Max) @ Id, Vgs :

110m Ω @ 6.8A, 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Mounting Type :

Surface Mount

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Single

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

90 mJ

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Pbfree Code :

yes

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

13.6A

DS Breakdown Voltage-Min :

60V