FQB13N06LTM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Pin Count :

3

Case Connection :

DRAIN

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.14Ohm

Power Dissipation-Max :

3.75W Ta 45W Tc

Terminal Form :

Gull wing

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 5V

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

13.6A

Reach Compliance Code :

Unknown

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

54.4A

Rds On (Max) @ Id, Vgs :

110m Ω @ 6.8A, 10V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

13.6A Tc

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

60V

Surface Mount :

yes

Series :

QFET®

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

90 mJ

Terminal Finish :

MATTE TIN

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

60V