FQB13N06LTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

QFET®

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL

Power Dissipation-Max :

3.75W Ta 45W Tc

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

54.4A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

60V

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

90 mJ

Drain-source On Resistance-Max :

0.14Ohm

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

13.6A Tc

Pbfree Code :

yes

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

13.6A

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 5V

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

60V

Rds On (Max) @ Id, Vgs :

110m Ω @ 6.8A, 10V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant