FQB12P20TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

20 ns

Width :

9.65mm

Power Dissipation :

3.13W

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

5V @ 250μA

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

7 Weeks

Nominal Vgs :

5 V

FET Type :

P-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2000

Drain to Source Voltage (Vdss) :

200V

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Weight :

1.31247g

Radiation Hardening :

No

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Height :

4.83mm

Drain to Source Breakdown Voltage :

-200V

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

195ns

Additional Feature :

FAST SWITCHING

Pulsed Drain Current-Max (IDM) :

46A

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Threshold Voltage :

-5V

Continuous Drain Current (ID) :

11.5mA

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

470m Ω @ 5.75A, 10V

Voltage - Rated DC :

-200V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

11.5A Tc

Power Dissipation-Max :

3.13W Ta 120W Tc

Fall Time (Typ) :

60 ns

Mount :

Surface Mount

Resistance :

470mOhm

Number of Elements :

1

Element Configuration :

Single

Vgs (Max) :

±30V

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Length :

10.67mm

Lead Free :

Lead Free

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Series :

QFET®

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Current Rating :

-11.5A

Turn-Off Delay Time :

40 ns